Field-free and efficient nanosecond spin–orbit torque switching in optimized WTe2/Fe3GaTe2 heterostructures

Spin–orbit torque (SOT) driven magnetization switching in all-van der Waals (vdW) heterostructures is a promising route toward next-generation, high-density spintronic memories. Improving switching efficiency and achieving nanosecond-scale operation are essential for practical applications. Here, we demonstrate room-temperature, field-free SOT magnetization switching in WTe2/Fe3GaTe2 heterostructures, achieved through an optimized fabrication process. The device achieves a high switching ratio of 90% at a low current density on the order of 105 A/cm2. Moreover, we demonstrate nanosecond-timescale magnetization switching while maintaining high switching ratio and energy efficiency. These results advance the viability of all-vdW heterostructures for energy-efficient, high-speed memory applications.

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Publication Details

Journal
Applied Physics Letters
Published
2026-05-11
DOI
https://doi.org/10.1063/5.0327470
Primary Topic
2D Materials and Applications
Type
article
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Field-free and efficient nanosecond spin–orbit torque switching in optimized WTe2/Fe3GaTe2 heterostructures

Bingbing Tong, Ziwei Dou, Guangtong Liu, Xia Song et al.
Applied Physics Letters
2D Materials and Applications
article

Field-free and efficient nanosecond spin–orbit torque switching in optimized WTe2/Fe3GaTe2 heterostructures

Bingbing Tong, Ziwei Dou, Guangtong Liu, Xia Song, Zhaozheng Lyu, Kewen Shi, Hua Ke, Junya Feng, Peiling Li, Li Li, Jiakai Yang, Zanhong Chen, Sicheng Zhou, Guojing Hu, Fanming Qu, Jie Shen, Haitao Yang
article en

Abstract

Spin–orbit torque (SOT) driven magnetization switching in all-van der Waals (vdW) heterostructures is a promising route toward next-generation, high-density spintronic memories. Improving switching efficiency and achieving nanosecond-scale operation are essential for practical applications. Here, we demonstrate room-temperature, field-free SOT magnetization switching in WTe2/Fe3GaTe2 heterostructures, achieved through an optimized fabrication process. The device achieves a high switching ratio of 90% at a low current density on the order of 105 A/cm2. Moreover, we demonstrate nanosecond-timescale magnetization switching while maintaining high switching ratio and energy efficiency. These results advance the viability of all-vdW heterostructures for energy-efficient, high-speed memory applications.

Applied Physics LettersVol. 128(19)
Chinese Academy of Sciences (CN), Harbin Institute of Technology (CN), Hefei University (CN), Physical Sciences (United States) (US), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), University of Chinese Academy of Sciences (CN), Beihang University (CN)
Affordable and clean energy
Openalex Percentile: Top 9%
2D Materials and Applications
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