Crystallographic orientation-dependent magnetotransport in the layered antiferromagnet - CrSBr

Among two-dimensional magnetic materials, CrSBr has attracted considerable attention owing to its coexistence of ferromagnetic and antiferromagnetic ordering, which depends sensitively on crystallographic orientation. An additional
distinguishing feature of CrSBr is its highly anisotropic Fermi surface in momentum space. In this work, we present
a comprehensive investigation of magnetoresistance by systematically orienting the bias current and the applied magnetic field along all three crystallographic axes. We demonstrate that the magnetoresistance serves as a direct probe
of electronic anisotropy, exhibiting pronounced variations when the current is applied along different crystallographic
directions under a magnetic field perpendicular to the sample plane. For in-plane magnetic fields, we observe conventional anisotropic magnetoresistance accompanied by hysteresis, indicative of ferromagnetic behavior. Overall, our
study provides a complete picture of electronic transport in CrSBr as a function of bias current and magnetic field
orientation with respect to crystallographic directions, thereby opening pathways for future experiments requiring high
sensitivity of electrical resistance to magnetic field gradients.