Giant Rashba splitting in a 2D BiAs layer on InAs(111)B

Abstract Bismuth-based compounds, such as Bi1 -x Sb x or Bi 2 Te 3 , have outstanding electronic properties especially for advanced quantum devices. However, the potential of low-dimensional group V-Bi materials is largely undetermined. Here, we report the experimental realization of a two-dimensional (2D) BiAs layer with giant Rashba spin splitting, grown on an InAs(111)B substrate via molecular beam epitaxy. ARPES reveals the emergence of a prominent M-shaped band structure and a distinct electron pocket at the Fermi level. DFT, complemented by synchrotron-based XPS, LEED, and STM, confirms strong spin-orbit coupling and a giant Rashba coefficient of these electronic states. An As overlayer, remaining from the fabrication process, preserves a structural shift between substrate and BiAs layer, essential for the Rashba splitting, while preventing undesirable reconstruction. This indicates how well-known capping techniques can stabilize new 2D compounds with interesting electronic structures, especially BiAs, a promising candidate to open possibilities for next-generation spintronic devices and field-effect transistors.

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Publication Details

Journal
Communications Materials
Published
2026-05-12
DOI
https://doi.org/10.1038/s43246-026-01185-y
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Giant Rashba splitting in a 2D BiAs layer on InAs(111)B

Sandra Benter, Marco Bianchi, Philip Hofmann, Chin Shen Ong et al.
Communications Materials
Topological Materials and Phenomena
article

Giant Rashba splitting in a 2D BiAs layer on InAs(111)B

Sandra Benter, Marco Bianchi, Philip Hofmann, Chin Shen Ong, Rainer Timm, Renan Da Paixao Maciel, Anders Mikkelsen, Craig Polley, Sébastien Plissard, Olle Eriksson, Rohit Yadav
article en

Abstract

Abstract Bismuth-based compounds, such as Bi1 -x Sb x or Bi 2 Te 3 , have outstanding electronic properties especially for advanced quantum devices. However, the potential of low-dimensional group V-Bi materials is largely undetermined. Here, we report the experimental realization of a two-dimensional (2D) BiAs layer with giant Rashba spin splitting, grown on an InAs(111)B substrate via molecular beam epitaxy. ARPES reveals the emergence of a prominent M-shaped band structure and a distinct electron pocket at the Fermi level. DFT, complemented by synchrotron-based XPS, LEED, and STM, confirms strong spin-orbit coupling and a giant Rashba coefficient of these electronic states. An As overlayer, remaining from the fabrication process, preserves a structural shift between substrate and BiAs layer, essential for the Rashba splitting, while preventing undesirable reconstruction. This indicates how well-known capping techniques can stabilize new 2D compounds with interesting electronic structures, especially BiAs, a promising candidate to open possibilities for next-generation spintronic devices and field-effect transistors.

Communications MaterialsVol. 7(1)
Uppsala University (SE), Centre National de la Recherche Scientifique (FR), Université Fédérale de Toulouse Midi-Pyrénées (FR), Lund University (SE), Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Aarhus University (DK), European Synchrotron Radiation Facility (FR), Elettra-Sincrotrone Trieste S.C.p.A. (IT), MAX IV Laboratory (SE)
European Commission, Agence Nationale de la Recherche, VINNOVA, Svenska Forskningsrådet Formas, Lunds Universitet, Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Centre National de la Recherche Scientifique, Danmarks Frie Forskningsfond, Horizon 2020 Framework Programme
Openalex Percentile: Top 5%
Topological Materials and Phenomena
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