Analytical solutions for the energy levels in asymmetric quantum wells

Abstract The one-dimensional rectangular quantum well is widely employed as a basic building block for many advanced semiconductor devices. Computationally efficient routines are required to model, analyze, and optimize these devices. In this paper, we develop novel and explicit closed-form expressions to calculate the energy levels of finite symmetric and asymmetric quantum wells, aiming at compact modeling of these advanced semiconductor devices. Specifically, we propose a novel approximation method to compute the roots of trigonometric transcendental equations by means of a Taylor series expansion around a sliding expansion point. The results are fully analytical expressions that provide the eigenenergies in terms of the quantum well parameters. The obtained expressions are validated against reference numerical solutions of the transcendental equations, and an agreement greater than 99% is achieved.

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Publication Details

Journal
Journal of Computational Electronics
Published
2026-05-11
DOI
https://doi.org/10.1007/s10825-026-02549-w
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

Analytical solutions for the energy levels in asymmetric quantum wells

Regiane Ragi, Murilo A. Romero, Adelcio M. de Souza, Daniel R. Celino
Journal of Computational Electronics
Advancements in Semiconductor Devices and Circuit Design
article

Analytical solutions for the energy levels in asymmetric quantum wells

Regiane Ragi, Murilo A. Romero, Adelcio M. de Souza, Daniel R. Celino
article en

Abstract

Abstract The one-dimensional rectangular quantum well is widely employed as a basic building block for many advanced semiconductor devices. Computationally efficient routines are required to model, analyze, and optimize these devices. In this paper, we develop novel and explicit closed-form expressions to calculate the energy levels of finite symmetric and asymmetric quantum wells, aiming at compact modeling of these advanced semiconductor devices. Specifically, we propose a novel approximation method to compute the roots of trigonometric transcendental equations by means of a Taylor series expansion around a sliding expansion point. The results are fully analytical expressions that provide the eigenenergies in terms of the quantum well parameters. The obtained expressions are validated against reference numerical solutions of the transcendental equations, and an agreement greater than 99% is achieved.

Journal of Computational ElectronicsVol. 25(3)
Universidade de São Paulo (BR)
Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Universidade de São Paulo
Affordable and clean energy
Openalex Percentile: Top 8%
Advancements in Semiconductor Devices and Circuit Design
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