Wake-Up-Free Complementary Metal–Oxide–Semiconductor-Compatible Multiferroic Heterostructures for Application in Magnetoelectric Spin–Orbit Devices

on a thin-film level. Insights into crystallization and diffusion during BEOL-compatible processing are obtained through structural investigation of the polycrystalline stacks. Qualitative indications for manipulation of the magnetic anisotropy are shown utilizing advanced scanning probe microscopy methods, suggesting the potential for application in scalable, CMOS-compatible magnetoelectric spin-orbit devices.