Sub‐Nanometer Ferroelectric Tunnel Junctions With Record‐High on‐Current Density Through Synergistic Microwave Annealing and High‐Field Activation

cycles) and retention (projected ∼10 years at 85°C), attributed to the reduced depolarization fields. Furthermore, simulations based on experimental data provide guidelines for achieving ideal FTJ performance at the ultimate scaling limits. Our comprehensive study establishes a clear pathway toward reliable FTJ memory suitable for high-density array applications without additional material complexity.