High‐Performance Giant Magnetoresistance in Gallium Nitride‐Doped With Mn for Spintronic Nanodevices

ABSTRACT We investigated the spin transport properties of models we constructed using Mn‐doped Zigzag gallium nitride nanoribbons (ZGaNNRs) by applying the nonequilibrium Green's function (NEGF) method in combination with DFT. In pure ZGaNNRs, a Mn atom substitutes for a Ga atom. The computational results suggest that Mn‐doped ZGaNNR devices exhibit a rare giant magnetoresistance up to 10, as well as spin negative differential resistance effects and a peak‐to‐valley current ratio. The observed giant magnetoresistance and spin negative differential resistance in Mn‐doped ZGaNNRs has potential applications for the design of future spintronic nanodevices.