Reconstruction of Transistor Amplification Principle and Engineering Implementation Based on Status-Relational Entropy (SRE) Dynamics

Based on the Status-Relational Entropy (SRE) Dynamics framework, this paper reconstructs the physical logic of transistor amplification using the speed of light c and Planck constant h as underlying scale benchmarks. By unifying external factors such as temperature, current, and process deviations into "scale ratios," the SRE framework solves the critical issue of unpredictable parameter drift found in traditional empirical models like Ebers-Moll. Experimental data verify that this approach achieves precise locking of the amplification factor Beta and suppression of thermal drift (error within 5%) without relying on redundant compensation circuits, providing a new theoretical foundation for high-precision, low-power integrated circuit design.