Reconfigurable Adaptive Synapse and Logic Device by Ambipolar Ferroelectric Semiconductor
, which acts as the highest occupied molecular orbital (HOMO), and Se vacancies, which serve as acceptors. Adaptive synaptic and logic functions are enabled through the control of ferroelectric polarization. The excitatory/inhibitory synaptic mode reconfiguration was successfully realized at an ultralow energy consumption from approximately 200 aJ to 20 fJ. The reversible ferroelectric switching serves as the underlying mechanism for the tunability of the inverter trip point. This study is an effort to break away from dedicated stationary applications and move closer to a future prototype device than previous works in integrating neuromorphic computing and logical functionalities.
Authors
- Jong Min Song
- Sangmoon Yoon (ORCID: https://orcid.org/0000-0001-6370-1320)
- Hagyoul Bae (ORCID: https://orcid.org/0000-0002-2462-4198)
- Seokjin Oh (ORCID: https://orcid.org/0000-0003-1552-6059)
- Kiyoung Lee (ORCID: https://orcid.org/0000-0003-4792-190X)
- Minah Park
- Seongbin Lim
- Hongseung Lee
- G. Seo
- Ji Won Heo (ORCID: https://orcid.org/0009-0009-8619-163X)
- Seohyeon Park
- Jaewook Yoo
- Sojin Jung
- Soyeon Kim
- TaeWan Kim
Institutions
- University of Seoul (KR)
- Gachon University (KR)
- Seoul Semiconductor (South Korea) (KR)
- Jeonbuk National University (KR)
- Hongik University (KR)
Publication Details
- Journal
- Small
- Published
- 2026-05-08
- DOI
- https://doi.org/10.1002/smll.202514124
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00