Stress‐to‐Light Conversion in an Earth‐Abundant Oxide Semiconductor
, introducing deep-level defects that enable stress-driven NIR emission and ferroelectricity. These coupled electronic and structural effects reveal a previously unknown light-emitting function in a simple oxide lattice. Our findings establish a rare-earth-free, self-powered platform for NIR photonics, offering scalable opportunities for biophotonic signaling and infrastructure health monitoring.
Authors
- Tomoki Uchiyama (ORCID: https://orcid.org/0000-0003-4880-7498)
- Chao‐Nan Xu (ORCID: https://orcid.org/0000-0002-7713-7131)
- Eiji Nishibori (ORCID: https://orcid.org/0000-0002-4192-6577)
- Koki Otonari
- Ying Chen (ORCID: https://orcid.org/0000-0002-3533-0208)
- Guangfa Yang
- Xu‐Guang Zheng
- Reona Omori
Institutions
- University of Tsukuba (JP)
- Saga University (JP)
- Tohoku University (JP)
Publication Details
- Journal
- Advanced Science
- Published
- 2026-05-08
- DOI
- https://doi.org/10.1002/advs.75587
- Primary Topic
- Advanced Sensor and Energy Harvesting Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Japan Society for the Promotion of Science