Quantitative Cathodoluminescence Mapping of External Radiative Efficiency in LEDs

This study introduces a quantitative cathodoluminescence (CL) measurement technique using an integrating sphere inside a scanning electron microscope (SEM). This technique allows one to access the external radiative efficiency (ERE), i.e., the product of radiative recombination and light extraction efficiencies. This contactless method was applied to map the efficiency of processed blue-emitting microlight-emitting diodes (LEDs) and deep UV-emitting nanowire-based heterostructures, demonstrating its versatility across semiconductor materials. Because the technique requires no preprocessing, it enables rapid, large-scale control of the homogeneity of emission yield right following epitaxy. Capable of operating across a wide field of view from the visible to the deep-UV range, this approach provides a nondestructive pathway for characterizing efficiencies of LEDs and solid-state emitters.

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Publication Details

Journal
ACS Photonics
Published
2026-05-08
DOI
https://doi.org/10.1021/acsphotonics.5c02927
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Quantitative Cathodoluminescence Mapping of External Radiative Efficiency in LEDs

Corentin Guérin, Fabrice Donatini, Gwénolé Jacopin, Bruno Daudin
ACS Photonics
GaN-based semiconductor devices and materials
article

Quantitative Cathodoluminescence Mapping of External Radiative Efficiency in LEDs

Corentin Guérin, Fabrice Donatini, Gwénolé Jacopin, Bruno Daudin
article en

Abstract

This study introduces a quantitative cathodoluminescence (CL) measurement technique using an integrating sphere inside a scanning electron microscope (SEM). This technique allows one to access the external radiative efficiency (ERE), i.e., the product of radiative recombination and light extraction efficiencies. This contactless method was applied to map the efficiency of processed blue-emitting microlight-emitting diodes (LEDs) and deep UV-emitting nanowire-based heterostructures, demonstrating its versatility across semiconductor materials. Because the technique requires no preprocessing, it enables rapid, large-scale control of the homogeneity of emission yield right following epitaxy. Capable of operating across a wide field of view from the visible to the deep-UV range, this approach provides a nondestructive pathway for characterizing efficiencies of LEDs and solid-state emitters.

ACS Photonics
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Institut Néel (FR), Université Grenoble Alpes (FR)
Agence Nationale de la Recherche
Affordable and clean energy
Openalex Percentile: Top 6%
GaN-based semiconductor devices and materials
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Quantitative Cathodoluminescence Mapping of External Radiative Efficiency in LEDs — Corentin Guérin, Fabrice Donatini, et al. · ACS Photonics (2026) | TGRS Research Map | TGRS