Record Performance in Vertically Stacked, Solution‐Processed ZTO Schottky Diodes
ABSTRACT Achieving sustainability in modern electronics requires the development of active components that combine functionality with environmental responsibility. Among these, eco‐friendly high‐performance diodes are essential building blocks. Here, we demonstrate Schottky diodes based on solution‐processed zinc–tin–oxide (ZTO) thin films. The use of abundant materials and low processing temperatures results in an overall cheaper device that maintains compatibility with flexible substrates. The ZTO diodes exhibit best in class results for vertically stacked solution‐based oxide diodes, such as rectification ratios exceeding nine orders of magnitude, and intrinsic cut‐off frequencies above 40 GHz.
Authors
- Raquel Azevedo Martins (ORCID: https://orcid.org/0000-0001-5219-3068)
- Emanuel Carlos (ORCID: https://orcid.org/0000-0002-5956-5757)
- Jonas Deuermeier (ORCID: https://orcid.org/0000-0002-2764-3124)
- Asal Kiazadeh (ORCID: https://orcid.org/0000-0002-8422-5762)
- Rodrigo Martins
- Elvira Fortunato (ORCID: https://orcid.org/0000-0002-4202-7047)
- João Vaz (ORCID: https://orcid.org/0000-0001-5745-3439)
- António Dias
- Carlos Eduardo Toma da Silva (ORCID: https://orcid.org/0000-0002-9645-1142)
- Jorge Martins (ORCID: https://orcid.org/0000-0001-5705-4331)
- Luís Mendes (ORCID: https://orcid.org/0009-0008-5413-6823)
Institutions
- Instituto Politécnico de Leiria (PT)
- Instituto de Telecomunicações (PT)
Publication Details
- Journal
- Advanced Materials Technologies
- Published
- 2026-05-02
- DOI
- https://doi.org/10.1002/admt.202502369
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- HORIZON EUROPE Framework Programme