Optical and electrical properties of GaAs clustered nanowires arrays with disordered lengths distributions

We analyze the optical and electrical properties of GaAs clustered NWs array (types 1-3) where NWs lengths follow a uniform random distribution. Using Bruggeman effective medium theory and the Transfer Matrix Method (TMM), we modeled the NWs within a PMMA matrix encapsulated by ITO and a Si substrate. All configurations exhibited oscillatory absorbance spectra with a downward trend at higher wavelengths. The type-1 clustered array, characterized by the least disorder, achieved peak absorbance of 85 per cent in the visible spectrum, significantly enhancing electrical performance. These findings demonstrate that while GaAs clustered NWs are viable for photovoltaics, increased disorder in type-2 and type-3 clusters adversely affects integrated absorption and device parameters. Linear relationships of the electrical parameters with the NWs lengths are observed in the range 500-1500 nm for the clustered NWs arrays at normal and oblique incidences. For p-polarization at 3 0 o , the GaAs NWs composed by type-1 clusters present an integrated absorption up to 2.5 per cent higher than that of the normal incidence. • Optical and electrical properties are evaluated in GaAs clustered nanowires arrays. • The NWs are constituted by type-1, type-2 and type-3 clusters with different NWs lenghts. • Oscillating behavior in the absorbance spectra are obtained in the three types of clusters. • The type-1 clustered array benefit the light trapping with an increasing of the electrical parameter values. • Linear relationships of Jsc, Voc, FF and PCE with the NWs lengths are observed. • For p-polarization, the integrated absorption is slightly greater than that of normal incidence for type-1 cluster.