Photorefraction and Optical Damage Resistance Enhancement in Uranium-Doped Lithium Niobate Crystals by Hafnium Co-Doping

A series of Hf co-doped uranium-doped lithium niobate (LN:U,Hf) crystals with a diameter of one inch were grown by the modified Bridgman method. XPS analysis showed that U ions coexist in mixed valence states of U4+, U5+, and U6+. At 442 nm, LN:U,Hf1.0 exhibited a fast photorefractive response of 0.32 s together with a high saturation diffraction efficiency of 82.01%. With increasing Hf concentration, the optical damage resistance was significantly enhanced, and LN:U,Hf5.0 achieved an optical damage threshold of 2.8 × 105 W/cm2. Two-beam coupling experiments indicated that electrons are the dominant charge carriers and diffusion is the main transport mechanism. It demonstrates that co-doping Hf4+ provides an effective route to simultaneously enhance photorefractive response and optical damage resistance in LN:U, offering potential for high-power and fast-response photonic devices.

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Publication Details

Journal
Crystals
Published
2026-05-02
DOI
https://doi.org/10.3390/cryst16050303
Primary Topic
Photorefractive and Nonlinear Optics
Type
article
Field-Weighted Citation Impact
0.00

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article

Photorefraction and Optical Damage Resistance Enhancement in Uranium-Doped Lithium Niobate Crystals by Hafnium Co-Doping

Dahuai Zheng, Hongde Liu, Ming Xi, Chenkai Fang et al.
Crystals
Photorefractive and Nonlinear Optics
article

Photorefraction and Optical Damage Resistance Enhancement in Uranium-Doped Lithium Niobate Crystals by Hafnium Co-Doping

Dahuai Zheng, Hongde Liu, Ming Xi, Chenkai Fang, Jiayue Xu, Dong Zhang, Hui Shen, Yaoqing Chu, Tian Tian
article en

Abstract

A series of Hf co-doped uranium-doped lithium niobate (LN:U,Hf) crystals with a diameter of one inch were grown by the modified Bridgman method. XPS analysis showed that U ions coexist in mixed valence states of U4+, U5+, and U6+. At 442 nm, LN:U,Hf1.0 exhibited a fast photorefractive response of 0.32 s together with a high saturation diffraction efficiency of 82.01%. With increasing Hf concentration, the optical damage resistance was significantly enhanced, and LN:U,Hf5.0 achieved an optical damage threshold of 2.8 × 105 W/cm2. Two-beam coupling experiments indicated that electrons are the dominant charge carriers and diffusion is the main transport mechanism. It demonstrates that co-doping Hf4+ provides an effective route to simultaneously enhance photorefractive response and optical damage resistance in LN:U, offering potential for high-power and fast-response photonic devices.

CrystalsVol. 16(5)
Nankai University (CN), Shanghai Institute of Technology (CN)
National Natural Science Foundation of China, Department of Education of Hebei Province
Openalex Percentile: Top 7%
Photorefractive and Nonlinear Optics
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