Polarity-Tunable Photoresponse in Te0.61Se0.39 Nanowire for Broadband Optoelectronic Logic and Perception

Polarity-tunable photocurrents provide an intrinsic decision variable that enables in-sensor computing within a single device, moving beyond simple intensity detection toward next-generation intelligent vision, yet traditional photodetectors are limited by static doping profiles and fixed junction polarities. To overcome this bottleneck, we propose a Te0.61Se0.39 nanowire device with polarity-tunable photoresponse for broadband optoelectronic logic operation via photocarrier diffusion under localized light illumination. By simultaneously harnessing temporal (pulse width), spatial (light positions), amplitude (light intensity), and bias, our polarity-tunable devices deterministically realize the four fundamental Boolean logic gates (AND, NAND, XNOR, XOR), with a responsivity of 1.39 A/W and a specific detectivity of 1.75 × 1010 Jones across the visible to mid-wave infrared spectrum. We further showcased its scalability by constructing a two-layer composite Boolean circuit through the integration of optoelectronic AND and NAND gates. Practical applications in optical encoding/decoding transmission and differential perception highlight its broad functional adaptability. This work establishes a paradigm for broadband polarity devices in low-dimensional nanowires, providing a versatile platform for optoelectronic logic and differential imaging applications.

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Publication Details

Journal
Coatings
Published
2026-04-30
DOI
https://doi.org/10.3390/coatings16050534
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Polarity-Tunable Photoresponse in Te0.61Se0.39 Nanowire for Broadband Optoelectronic Logic and Perception

Fengyi Zhu, Xuhao Fan, C B Liu, Changyi Pan et al.
Coatings
2D Materials and Applications
article

Polarity-Tunable Photoresponse in Te0.61Se0.39 Nanowire for Broadband Optoelectronic Logic and Perception

Fengyi Zhu, Xuhao Fan, C B Liu, Changyi Pan, Haibiao Guan, Liuping Liu, Shian Mi, Guanhai Li, Xiaohan Wei, Sheng Ni, Haibo Shu, Xiaoshuang Chen
article en

Abstract

Polarity-tunable photocurrents provide an intrinsic decision variable that enables in-sensor computing within a single device, moving beyond simple intensity detection toward next-generation intelligent vision, yet traditional photodetectors are limited by static doping profiles and fixed junction polarities. To overcome this bottleneck, we propose a Te0.61Se0.39 nanowire device with polarity-tunable photoresponse for broadband optoelectronic logic operation via photocarrier diffusion under localized light illumination. By simultaneously harnessing temporal (pulse width), spatial (light positions), amplitude (light intensity), and bias, our polarity-tunable devices deterministically realize the four fundamental Boolean logic gates (AND, NAND, XNOR, XOR), with a responsivity of 1.39 A/W and a specific detectivity of 1.75 × 1010 Jones across the visible to mid-wave infrared spectrum. We further showcased its scalability by constructing a two-layer composite Boolean circuit through the integration of optoelectronic AND and NAND gates. Practical applications in optical encoding/decoding transmission and differential perception highlight its broad functional adaptability. This work establishes a paradigm for broadband polarity devices in low-dimensional nanowires, providing a versatile platform for optoelectronic logic and differential imaging applications.

CoatingsVol. 16(5)
Shanghai Institute of Technical Physics (CN), University of Chinese Academy of Sciences (CN), China Jiliang University (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province
Openalex Percentile: Top 12%
2D Materials and Applications
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