Optimized flexible Bi2Te3/FeNi spintronic heterostructure for high-efficiency terahertz emission
Flexible spintronic heterostructure based on topological insulators (TI) enables terahertz (THz) generation for spectroscopy and next-generation communications. Challenges remain in enhancing THz intensity and mechanical durability. Here, Bi2Te3(10 nm)/FeNi(3 nm) on polyimide substrates was optimized via growth temperature tuning and Pt interlayer insertion. The heterostructure shows a 3.8-fold THz enhancement over single layers, attributed to topological surface states (TSSs) of Bi2Te3. Pt interlayer (1.5 nm) boosts emission by 467% (vs no Pt) and 17% (vs Pt/FeNi bilayer) via the inverse spin Hall effect of Pt and preserved TSSs of the TI. Devices retain 98% THz emission after 1200 bending cycles, highlighting potential for flexible THz emission.
Authors
- Dezheng Yang (ORCID: https://orcid.org/0000-0001-8527-8519)
- Yong Xiao
- Chenxia Guo (ORCID: https://orcid.org/0000-0002-5347-9890)
- Huaping Zuo
- Yalu Zuo
- Li Xi (ORCID: https://orcid.org/0000-0003-0311-8197)
- Xi Guo
- Qi Zhang
- Tong Li (ORCID: https://orcid.org/0000-0001-6132-9801)
- Xiaoxi Liu (ORCID: https://orcid.org/0009-0009-8798-7293)
- Haiming Xu
- Baoshan Cui (ORCID: https://orcid.org/0000-0002-3877-4744)
- Yuhang Pu
Institutions
- Lanzhou University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-04-27
- DOI
- https://doi.org/10.1063/5.0324490
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China