Crystal-Orientation-Dependent Material Removal and Subsurface Damage of AlN During Laser-Assisted Single-Grit Nanogrinding: An Atomistic Study

Laser assistance offers a promising pathway for high-efficiency and low-damage ultraprecision grinding for difficult-to-machine hard-brittle semiconductors. This study employs atomistic simulation to investigate the surface removal and subsurface damage mechanisms of C-, M-, and A-plane AlN workpieces during single-grit laser-assisted nanogrinding (LAG). The results indicate that LAG reduces material pileup, thereby decreasing the grit–workpiece contact area and grinding resistance. By leveraging laser-induced thermal effects to enhance atomic plastic flow, LAG evidently achieves a higher material removal rate than conventional grinding (CG). Grinding the C-plane along a <11–20> orientation yields the lowest surface roughness, although this improvement is not useful for the M- and A-planes. Tangential force increases linearly with grinding depth in both methods, but LAG exhibits a lower rate of increase. LAG consistently produces lower grinding forces and friction coefficients and results in lower dislocation densities in C- and A-plane AlN workpieces at nearly all grinding depths. The C-plane exhibits the thinnest damage layer, followed by the M-plane, with the A-plane the thickest. Increasing the laser power density lowers the grinding force and enhances the removal efficiency. Optimal power density minimizes subsurface damage and improves surface quality; however, excessive power density exacerbates damage. This work provides valuable insights for developing high-efficiency, low-damage LAG techniques for hard-brittle semiconductors.