Computational Design and Simulations of Lead-Free CsSnI3/MoS2 Heterojunction Photodetector

In this study, we combined lead-free inorganic perovskite, CsSnI3, with a transition metal chalcogenide, MoS2, to develop a hybrid architecture for photodetectors utilizing the SCAPS-1D simulation tool. The performance of the photodetector was investigated across various thicknesses, doping concentrations, light intensities, and temperatures. An in-depth analysis of built-in potential, recombination rate, generation rate, quantum efficiency, I-V characteristics, and other performance parameters showed that the ideal thickness, doping density, bulk defect density, and interface defect density for enhanced photodetector performance are 800 nm, 1 × 1019 cm−3, 1 × 1014 cm−3, and 1 × 1010 cm−3, respectively. The photodetector exhibits optimal performance within the wavelength range of 200–500 nm and under illumination levels of 500–700 mW/m2, maintaining a consistent responsivity of 0.59 A/W, a detectivity of 4.28 × 1013 Jones, a photocurrent of 34.50 mA/cm2, and a low dark current of 10−6 mA/cm2, with good thermal stability over a wide range of temperatures. The findings indicate that the CsSnI3/MoS2 heterojunction photodetector exhibits superior performance characterized by enhanced sensitivities throughout a broad operational range within the UV–blue visible spectrum and paves the way for the development of cost-effective, high-performance photodetectors in future optoelectronic applications.