Understanding Light‐Soaking Effects in Silicon Solar Cells by Considering Charge Carrier‐Enhanced Atomic Hydrogen Release

ABSTRACT This study investigates the dynamics of hydrogen in p‐type silicon semiconductors, with a particular focus on the influence of excess minority carriers on hydrogen reactions. Our findings reveal that the presence of these carriers significantly increases atomic hydrogen concentration due to enhanced acceptor‐hydrogen dissociation. We propose a unified model that effectively describes the behavior of hydrogen species under both thermal equilibrium and non‐equilibrium conditions in both B‐ and Ga‐doped Si. This model provides a coherent explanation for phenomena associated with Light‐ and Elevated Temperature‐Induced Degradation (LeTID) during dark annealing and light soaking processes. We believe that any light soaking process in the photovoltaic industry causes hydrogen‐related effects, even if unintentional. This understanding is pivotal for optimizing light soaking processes, ultimately improving defect and surface passivation and enhancing the efficiency of silicon solar cells.