Chemical Origin of Exciton Self-Trapping in Cs <sub>3</sub> Cu <sub>2</sub> X <sub>5</sub> Cesium Copper Halides

Copper halides Cs<sub>3</sub>Cu<sub>2</sub>X<sub>5</sub> (X = Cl, Br, I) are promising materials for optoelectronic applications due to their high photoluminescence efficiency, stability, and large Stokes shifts. Based on previous investigations of the excitation in specific halides, we uncover a universal chemical bonding origin for the Stokes shift in these materials across the entire X = Cl, Br, I series using density functional theory calculations. Upon excitation, one [Cu<sub>2</sub>X<sub>5</sub>]<sup>3-</sup> anion undergoes sizable local distortions, driven by Cu–X and Cu–Cu bond formation. These structural changes coincide with the formation of a self-trapped exciton, where, particularly, the hole is strongly localized on one anion. These structural changes are also found to lead to a robust energy minimum with little dependence on the initial distortion method. Analysis of the electronic structure and bonding reveals reduced antibonding interactions and enhanced bonding character in the excited state, thereby stabilizing the distorted geometry. Our results establish a direct link between orbital-specific hole localization and bond formation. They provide a fundamental understanding of the excitation mechanism in Cs<sub>3</sub>Cu<sub>2</sub>X<sub>5</sub> and offer design principles to tune optical properties in 0D copper halides.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2026-05-01
DOI
https://doi.org/10.1021/acs.jpcc.6c02087
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Chemical Origin of Exciton Self-Trapping in Cs 3 Cu 2 X 5 Cesium Copper Halides

Shuxia Tao, Geert Brocks, Zijin Wu
The Journal of Physical Chemistry C
Semiconductor Quantum Structures and Devices
article

Chemical Origin of Exciton Self-Trapping in Cs 3 Cu 2 X 5 Cesium Copper Halides

Shuxia Tao, Geert Brocks, Zijin Wu
article en

Abstract

Copper halides Cs<sub>3</sub>Cu<sub>2</sub>X<sub>5</sub> (X = Cl, Br, I) are promising materials for optoelectronic applications due to their high photoluminescence efficiency, stability, and large Stokes shifts. Based on previous investigations of the excitation in specific halides, we uncover a universal chemical bonding origin for the Stokes shift in these materials across the entire X = Cl, Br, I series using density functional theory calculations. Upon excitation, one [Cu<sub>2</sub>X<sub>5</sub>]<sup>3-</sup> anion undergoes sizable local distortions, driven by Cu–X and Cu–Cu bond formation. These structural changes coincide with the formation of a self-trapped exciton, where, particularly, the hole is strongly localized on one anion. These structural changes are also found to lead to a robust energy minimum with little dependence on the initial distortion method. Analysis of the electronic structure and bonding reveals reduced antibonding interactions and enhanced bonding character in the excited state, thereby stabilizing the distorted geometry. Our results establish a direct link between orbital-specific hole localization and bond formation. They provide a fundamental understanding of the excitation mechanism in Cs<sub>3</sub>Cu<sub>2</sub>X<sub>5</sub> and offer design principles to tune optical properties in 0D copper halides.

The Journal of Physical Chemistry C
Eindhoven University of Technology (NL), University of Twente (NL)
Nederlandse Organisatie voor Wetenschappelijk Onderzoek
Openalex Percentile: Top 9%
Semiconductor Quantum Structures and Devices
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Chemical Origin of Exciton Self-Trapping in Cs <sub>3</sub> Cu <sub>2</sub> X <sub>5</sub> Cesium Copper Halides — Shuxia Tao, Geert Brocks, et al. · The Journal of Physical Chemistry C (2026) | TGRS Research Map | TGRS