Investigation of Si/GaN Heterojunction PN Diode Characteristics Modulated by the Piezoelectric Effect

Piezoelectric semiconductor combines the unique properties of semiconducting characteristics and piezoelectric effect together, providing a universal methodology to modulate piezoelectric semiconductor device’s performance by simply introducing mechanical strain. To reveal the device physics beneath the piezoelectric modulation, in this work, a multiphysics COMSOL 6.0 simulation was employed to investigate the modulation of Si/GaN heterojunction PN diode characteristics via piezoelectric-induced interface polarization charges. The effects of charge polarity and density on forward recovery, reverse recovery, and irradiation responses were systematically analyzed. The results demonstrate that negative interface charges enhance carrier injection and accelerate device activation, whereas positive charges suppress overshoot and stabilize transient voltage behavior. During reverse recovery, negative charges shorten the storage delay and reduce the reverse peak current, improving the switching speed, whereas positive charges cause slower recovery. Under irradiation, the interface polarization charges modulate the photocurrent density by altering the depletion width and carrier collection efficiency; negative charges notably enhance the photocurrent in partially depleted devices. Furthermore, the influence of the polarization charges diminishes with increasing device length or doping concentration, as the built-in charge and electric field effects dominate. This study elucidates the physical mechanisms of piezoelectric charge control in Si/GaN heterojunctions and provides theoretical guidance for the design of high-speed, low-loss, and radiation-tunable power and optoelectronic devices.