RF Transmit-and-Receive MMIC Front-End for V-Band Inter-Satellite Link

This research focuses on the design and simulation of a V-band single-chip transmit-and-receive front-end integrating an LNA, PA and switching functions for ISL terminals. Two technologies are compared: a 60 nm GaN/Si HEMT from MESC and a 100 nm GaAs HEMT from UMS. In Tx mode, the proposed design targets a saturated output power of at least 20 dBm and a power-added efficiency of no less than 5%. In Rx mode, the goal is 4 dB noise figure. In both cases, the small signal gain must exceed 20 dB across the 59–71 GHz band.