Optically revealing single electrically active dislocations in GaN-on-Si via one-to-one structure–electronic correlation
Authors
- Chi‐Tsu Yuan (ORCID: https://orcid.org/0000-0003-3790-9376)
- Russel Cruz Sevilla (ORCID: https://orcid.org/0009-0005-2566-9282)
- Irwan Saleh Kurniawan (ORCID: https://orcid.org/0009-0000-6910-5060)
- Hsiu-Ming Hsu
- Ruth Jeane Soebroto (ORCID: https://orcid.org/0009-0007-3443-3217)
- Wen-Chung Li
- Wei‐Jen Hsueh
- Hertz Hsu
- Hsiu-Ying Huang
- Ji-Lin Shen
Institutions
- Chung Yuan Christian University (TW)
- Taoyuan Chang Gung Memorial Hospital (TW)
Publication Details
- Journal
- APL Materials
- Published
- 2026-05-01
- DOI
- https://doi.org/10.1063/5.0306134
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science and Technology Council