Reconfigurable threshold voltage and excellent anti-single-event transient performance in the HfO2-based ferroelectric FlexFET

Ferroelectric field effect transistor (FeFET) memory, integrated with the recently discovered HfO2-based ferroelectric thin films, has attracted significant interest as a promising technology for next-generation non-volatile memory applications. In this work, we present a fully depleted silicon-on-insulator (FD-SOI) independently double-gated FeFET (Fe-FlexFET) based on Hf0.5Zr0.5O2 (HZO) ferroelectric thin film. The Fe-FlexFET provides flexible dynamic threshold voltage (VTH) control, which can not only eliminate the reliability issue of VTH shift but also be utilized to construct reconfigurable integrated circuits. Based on a technology computer-aided design numerical model, we demonstrate that the large VTH tuning capability could be efficiently achieved via increasing the HZO thickness and reducing the silicon thickness. Moreover, the Fe-FlexFET exhibits significantly improved robustness against single-event transients compared to the FD-SOI FeFET, attributed to the collection of holes and electrons at the bottom gate junction. This study paves the way for highly reliable HfO2-based FeFET memories and underscores their great potential for application in reconfigurable integrated circuits.