Short‐Wavelength Infrared Imaging with Organic Photodetectors Based on Non‐Fullerene Acceptors with Detection above 1200 nm

Jones, outperforming benchmark commercial silicon detectors in the shortwave infrared (SWIR) range, while maintaining stable photoresponse over 3 million on/off illumination cycles. Furthermore, a prototype blade-coated active-matrix imager is fabricated in air on an amorphous silicon backplane. The imager exhibits a broadband light detection range spanning from visible to SWIR, enabling practical applications such as faint infrared light imaging, semiconductor wafer inspection, LiDAR light detection, and banknote verification. Combined with detailed materials cost analysis, this work represents the first demonstration of an integrated active-matrix imager employing a fully organic semiconductor photoactive layer capable of high-speed SWIR imaging, highlighting its promise for a scalable and cost-effective next-generation SWIR photodetector.

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Publication Details

Journal
Advanced Materials
Published
2026-04-30
DOI
https://doi.org/10.1002/adma.202522600
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.00

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article

Short‐Wavelength Infrared Imaging with Organic Photodetectors Based on Non‐Fullerene Acceptors with Detection above 1200 nm

Davide Nodari, Filip Aniés, Martyn A. McLachlan, Edoardo Angela et al.
Advanced Materials
CCD and CMOS Imaging Sensors
article

Short‐Wavelength Infrared Imaging with Organic Photodetectors Based on Non‐Fullerene Acceptors with Detection above 1200 nm

Davide Nodari, Filip Aniés, Martyn A. McLachlan, Edoardo Angela, Patipan Sukpoonprom, Pichaya Pattanasattayavong, Artem Bakulin, Nicola Gasparini, Zhuoran Qiao, Denis Andrienko, K-Y Lin, Matilde Brunetta, Marie Houot, Sandeep Sharma, Yakun He, Eunyoung Hong, Martin Heeney, Zian Wang, Frédéric Laquai
article en

Abstract

Jones, outperforming benchmark commercial silicon detectors in the shortwave infrared (SWIR) range, while maintaining stable photoresponse over 3 million on/off illumination cycles. Furthermore, a prototype blade-coated active-matrix imager is fabricated in air on an amorphous silicon backplane. The imager exhibits a broadband light detection range spanning from visible to SWIR, enabling practical applications such as faint infrared light imaging, semiconductor wafer inspection, LiDAR light detection, and banknote verification. Combined with detailed materials cost analysis, this work represents the first demonstration of an integrated active-matrix imager employing a fully organic semiconductor photoactive layer capable of high-speed SWIR imaging, highlighting its promise for a scalable and cost-effective next-generation SWIR photodetector.

Advanced Materials
National Tsing Hua University (TW), Max Planck Institute for Polymer Research (DE), Vidyasirimedhi Institute of Science and Technology (TH), Imperial College London (GB), King Abdullah University of Science and Technology (SA), Ludwig-Maximilians-Universität München (DE)
National Science and Technology Council, Engineering and Physical Sciences Research Council, Global Collaborative Research, King Abdullah University of Science and Technology
Industry, innovation and infrastructure
Openalex Percentile: Top 13%
CCD and CMOS Imaging Sensors
DOIOpen Access PDFOpenAlex
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