Spin‐Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking

(SRO) that can be reversibly manipulated by the ferroelectric (FE) polarization of the adjacent FE material. Scanning transmission electron microscopy reveals that this crystal ISB is a novel crystal distortion, i.e., c/a crystal ratio change, induced by the Ru cation's off-center displacement within the electrostatic screening depth due to the FE field. By electrical harmonic measurement, we reveal that the existence of this crystal ISB can dramatically enhance the SOT efficiency in the SRO layer by more than 60%. Our work provides an alternative to design highly efficient SOT source layer, paving the way toward low-power spintronics.

Authors

Institutions

Publication Details

Journal
Advanced Materials
Published
2026-04-27
DOI
https://doi.org/10.1002/adma.73219
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Spin‐Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking

Rui Xiao, Q Chen, Zhanqi Zhou, Tieyang Zhao et al.
Advanced Materials
Ferroelectric and Piezoelectric Materials
article

Spin‐Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking

Rui Xiao, Q Chen, Zhanqi Zhou, Tieyang Zhao, Q F Zhang, Zhongran Liu, Lanxin Jia, Naafis Ahnaf Shahed, He Tian, Zhenyi Zheng, J Chen, Himanshu Mavani, Xiaohong Xu, Shu Shi, Liang Liu, Evgeny Y. Tsymbal, Guowei Zhou, Cheng Zhang
article en

Abstract

(SRO) that can be reversibly manipulated by the ferroelectric (FE) polarization of the adjacent FE material. Scanning transmission electron microscopy reveals that this crystal ISB is a novel crystal distortion, i.e., c/a crystal ratio change, induced by the Ru cation's off-center displacement within the electrostatic screening depth due to the FE field. By electrical harmonic measurement, we reveal that the existence of this crystal ISB can dramatically enhance the SOT efficiency in the SRO layer by more than 60%. Our work provides an alternative to design highly efficient SOT source layer, paving the way toward low-power spintronics.

Advanced Materials
University of Nebraska–Lincoln (US), Chongqing University (CN), National University of Singapore (SG), Zhejiang University of Science and Technology (CN), Shanghai Jiao Tong University (CN), Ministry of Education (RW), Suzhou Research Institute (CN), Zhejiang University (CN), Beihang University (CN)
National Research Foundation, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 9%
Ferroelectric and Piezoelectric Materials
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.