Effect of Heating/Cooling Rate and Temperature on Microstructure and Electrical Properties of Sputter-Deposited PZT Thin Films Crystallized by Conventional Furnace Annealing

Lead zirconate titanate (PZT) is a widely used material for applications in microsensors, actuators, and transducers. Due to its high piezoelectric coefficient, large dielectric constant, and strong polarization capability near the morphotropic phase boundary (Zr/Ti ≈ 52/48), it is considered one of the most attractive materials for micro-electromechanical systems (MEMS). These advantageous material properties strongly depend on the PZT layer’s microstructure and crystallinity, which are primarily determined by the choice of seed layer, deposition conditions, and the post-deposition annealing treatment that promotes the formation of the PZT’s perovskite phase. In this contribution, sputter-deposited PZT thin films were crystallized by conventional furnace annealing (CFA) to evaluate the effect of heating/cooling rates (1 °C·min−1–7 °C·min−1) within a temperature range of 450 °C to 700 °C on structural, electrical, and ferroelectric properties, with consideration of the seed layer preparation. We characterized the materials’ properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and measurements of the ferroelectric hysteresis, capacitance, and leakage current. All samples annealed at temperatures of at least 500 °C fully crystallized into the perovskite phase, independently of the heating/cooling rate. The best ferroelectric performance was achieved at 550 °C with a 1 °C·min−1 heating/cooling rate, yielding a saturation polarization of 82.8 µC·cm−2 and a remnant polarization of 36.9 µC·cm−2 under a maximum applied field of 300 kV·cm−1.