Implementation of CMOS Min-Max Circuit in 0.13um

In this paper the outline and reproduction of a multi-input fluffy MIN and MAX circuits in light of another methodology taking simple plan points of interest, for example, low kick the bucket zone, fast, and effortlessness is considered. Particular current-mode circuits to acquire the base and greatest of N simple sources of info are depicted. The acknowledgment technique is reasonable for manufacture utilizing CMOS innovation. The circuit demonstrates the value of having high exactness and a substantial powerful range. Its activity is examined and outlined with recreation results. This multi-input fluffy MIN and MAX circuits were manufactured inside 130 nm BSIM3V3 CMOS innovation.

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Publication Details

Journal
Science Publishing Corporation Inc. - International Journal of Engineering & Technology
Published
2026-04-27
DOI
https://doi.org/10.14419/ijet.v7i3.19.19897
Primary Topic
Low-power high-performance VLSI design
Type
article
Field-Weighted Citation Impact
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article

Implementation of CMOS Min-Max Circuit in 0.13um

Ridouane Hamdaouy, Mostapha boussetta, Khadija Slaoui
Science Publishing Corporation Inc. - International Journal of Engineering & Technology
Low-power high-performance VLSI design
article

Implementation of CMOS Min-Max Circuit in 0.13um

Ridouane Hamdaouy, Mostapha boussetta, Khadija Slaoui
article en

Abstract

In this paper the outline and reproduction of a multi-input fluffy MIN and MAX circuits in light of another methodology taking simple plan points of interest, for example, low kick the bucket zone, fast, and effortlessness is considered. Particular current-mode circuits to acquire the base and greatest of N simple sources of info are depicted. The acknowledgment technique is reasonable for manufacture utilizing CMOS innovation. The circuit demonstrates the value of having high exactness and a substantial powerful range. Its activity is examined and outlined with recreation results. This multi-input fluffy MIN and MAX circuits were manufactured inside 130 nm BSIM3V3 CMOS innovation.

Science Publishing Corporation Inc. - International Journal of Engineering & Technology
Industry, innovation and infrastructure
Openalex Percentile: Top 7%
Low-power high-performance VLSI design
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