Development and characterization of a ribbon-type ion beam source test bench for ion implantation applications

Abstract As semiconductor fabrication increasingly requires precise control of ion energy and implantation current, reliable evaluation of ion source extraction characteristics becomes essential. In this study, a ribbon-type ion beam source test bench is developed with independent control of plasma generation and beam extraction conditions. A multi-channel Faraday cup is employed to measure spatially resolved beam current distributions and to reconstruct two-dimensional beam profiles. By varying extraction voltage, arc current, and electrode spacing, we identify the normal extraction window and the condition that minimizes beam spreading along both axes. The results show that extracted current and beam focusing are strongly coupled in the three-electrode extraction system, demonstrating the importance of spatially resolved diagnostics for practical optimization of ribbon-type ion sources.