Epitaxial lift-off of halide perovskites

Epitaxial halide perovskites have emerged as a new frontier for high-performance optoelectronics owing to their exceptional crystallinity, long carrier diffusion lengths, and orientation-dependent electronic properties. However, their growth on rigid and often insulating single-crystal substrates severely limits device architectures and precludes integration with flexible, conductive, or heterogeneous platforms. This review systematically summarizes recent advances in epitaxial growth and corresponding lift-off strategies of halide perovskites. We first discuss three representative epitaxial modes—chemical epitaxy, van der Waals epitaxy, and remote epitaxy—highlighting their distinct interfacial bonding mechanisms and resulting film characteristics. We then examine corresponding lift-off techniques, including direct mechanical, two-dimensional interlayer-assisted, and mask-assisted lift-off, emphasizing their applicability, film quality, and scalability. Finally, we summarize recent advances in photodetectors, micro-light-emitting diodes, and solar cells enabled by transferred epitaxial films, underscoring their improved efficiency, stability, and mechanical flexibility. We conclude by outlining key challenges and future opportunities for scalable, damage-free exfoliation and heterogeneous integration. This review aims to provide a roadmap for advancing epitaxial lift-off toward practical, high-performance halide perovskite optoelectronic technologies.