Solution-Processed Zn-Doped In <sub>2</sub> S <sub>3</sub> Electron Transport Layers for Quantum Dot Light-Emitting Diodes

is a promising ETL candidate for high-performance QLEDs and establish a new design concept for developing high-performance QLEDs based on metal sulfide ETLs.

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Publication Details

Journal
Langmuir
Published
2026-04-25
DOI
https://doi.org/10.1021/acs.langmuir.6c00984
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.00

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article

Solution-Processed Zn-Doped In 2 S 3 Electron Transport Layers for Quantum Dot Light-Emitting Diodes

Xinan Shi, Youhua Zuo, Chen Lin, Xuecong Shen et al.
Langmuir
Quantum Dots Synthesis And Properties
article

Solution-Processed Zn-Doped In 2 S 3 Electron Transport Layers for Quantum Dot Light-Emitting Diodes

Xinan Shi, Youhua Zuo, Chen Lin, Xuecong Shen, Mengxin Liu, Daocheng Pan
article en

Abstract

is a promising ETL candidate for high-performance QLEDs and establish a new design concept for developing high-performance QLEDs based on metal sulfide ETLs.

Langmuir
Guangxi University (CN)
Natural Science Foundation of Guangxi Zhuang Autonomous Region
Affordable and clean energy
Openalex Percentile: Top 10%
Quantum Dots Synthesis And Properties
DOISourceOpenAlex
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