Doping‐Engineered Transition Metal Oxides: A Dual Strategy of Oxygen Vacancy Suppression and Photoelectric Modification for Silicon Compounds Heterojunction Solar Cells
-TMO device, consistent with the theoretical results. This work bridges theoretical understanding and device realization, offering valuable guidance for designing high-efficiency, dopant-engineered c-Si photovoltaics.
Authors
- Pingqi Gao (ORCID: https://orcid.org/0000-0002-6424-4835)
- Dongdong Li (ORCID: https://orcid.org/0000-0003-3219-181X)
- Yanhao Wang (ORCID: https://orcid.org/0000-0001-7022-3582)
- Qingxian Nong
- Yi-Xiang Wang (ORCID: https://orcid.org/0000-0002-4021-4228)
- Anzhi Xie
- Zhuotong Zhong
- Kaiming Shang
- Jian He (ORCID: https://orcid.org/0000-0003-3733-3063)
Institutions
- Sun Yat-sen University (CN)
- Shanghai Advanced Research Institute (CN)
- Shanghai Zhangjiang Laboratory (CN)
- Solar Energy Research Institute of Sun Yat-sen University (CN)
Publication Details
- Journal
- Small Methods
- Published
- 2026-04-24
- DOI
- https://doi.org/10.1002/smtd.70669
- Primary Topic
- Silicon and Solar Cell Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China