Enhanced Thermoelectric Performance by Inverted Thermal Conductivity Anisotropy in Layered <i>AE</i> <sub>2</sub> ZnN <sub>2</sub> ( <i>AE</i> = Ca, Sr, Ba) with Rigid Interlayer Bonds

Nitrides are thought to be candidates for eco-friendly thermoelectric (TE) materials; however, the TE performances of conventional nitrides are often limited by high lattice thermal conductivity (κlat). In this study, we focus on layered ternary nitride semiconductors, AE2ZnN2 (AE = Ca, Sr, Ba), as a novel class of TE nitrides, and we performed all first-principles calculations for electron and phonon transport to predict their ultimate TE performances. It is found that p-type AE2ZnN2 exhibits strong electronic anisotropy, i.e., the electronic conductivity (σ) is higher (corresponding to smaller carrier effective mass m*) in the in-plane direction and lower in the out-of-plane direction, as commonly expected for layered crystal structures due to their two-dimensional electronic structures. While layered crystals typically exhibit larger in-plane κlat than out-of-plane κlat, AE2ZnN2 shows unexpected, inverted κlat anisotropy. This inverted anisotropy comes from the coordination structures in AE2ZnN2, where AE–N layers are interconnected by strong −(AEN)-Zn-(AEN)– linear bonds along the out-of-plane direction, whereas in-plane chemical bonds are governed by weak interactions between pyramidal AE–N5 polyhedra. Among the AE2ZnN2 compounds, Ba2ZnN2 shows the lowest in-plane κlat, reaching 3.9 W/(m·K) at 300 K, owing to the heaviest Ba ion with the weakest chemical bonds. The in-plane Seebeck coefficients (S) of p-type Ba2ZnN2 are enhanced by the large in-plane density-of-state effective masses (mDOS*) arising from multiple hole pockets below the valence band maximum (VBM), yielding an in-plane ZT of 1.0 at 900 K. This high ZT is attained by the combination of a two-dimensional electronic structure, multivalley structures near the VBM, and inverted κlat anisotropy, which enables high σ and S together with low κlat in Ba2ZnN2. These results point to AE2ZnN2 compounds, particularly Ba2ZnN2, as potential environmentally friendly TE materials.

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Publication Details

Journal
The Journal of Physical Chemistry C
Published
2026-04-24
DOI
https://doi.org/10.1021/acs.jpcc.5c08170
Primary Topic
Thermal Expansion and Ionic Conductivity
Type
article
Field-Weighted Citation Impact
0.00

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article

Enhanced Thermoelectric Performance by Inverted Thermal Conductivity Anisotropy in Layered AE 2 ZnN 2 ( AE = Ca, Sr, Ba) with Rigid Interlayer Bonds

Ryusei Higuchi, Takayoshi Katase, Terumasa Tadano, Xinyi He et al.
The Journal of Physical Chemistry C
Thermal Expansion and Ionic Conductivity
article

Enhanced Thermoelectric Performance by Inverted Thermal Conductivity Anisotropy in Layered AE 2 ZnN 2 ( AE = Ca, Sr, Ba) with Rigid Interlayer Bonds

Ryusei Higuchi, Takayoshi Katase, Terumasa Tadano, Xinyi He, Toshio Kamiya
article en

Abstract

Nitrides are thought to be candidates for eco-friendly thermoelectric (TE) materials; however, the TE performances of conventional nitrides are often limited by high lattice thermal conductivity (κlat). In this study, we focus on layered ternary nitride semiconductors, AE2ZnN2 (AE = Ca, Sr, Ba), as a novel class of TE nitrides, and we performed all first-principles calculations for electron and phonon transport to predict their ultimate TE performances. It is found that p-type AE2ZnN2 exhibits strong electronic anisotropy, i.e., the electronic conductivity (σ) is higher (corresponding to smaller carrier effective mass m*) in the in-plane direction and lower in the out-of-plane direction, as commonly expected for layered crystal structures due to their two-dimensional electronic structures. While layered crystals typically exhibit larger in-plane κlat than out-of-plane κlat, AE2ZnN2 shows unexpected, inverted κlat anisotropy. This inverted anisotropy comes from the coordination structures in AE2ZnN2, where AE–N layers are interconnected by strong −(AEN)-Zn-(AEN)– linear bonds along the out-of-plane direction, whereas in-plane chemical bonds are governed by weak interactions between pyramidal AE–N5 polyhedra. Among the AE2ZnN2 compounds, Ba2ZnN2 shows the lowest in-plane κlat, reaching 3.9 W/(m·K) at 300 K, owing to the heaviest Ba ion with the weakest chemical bonds. The in-plane Seebeck coefficients (S) of p-type Ba2ZnN2 are enhanced by the large in-plane density-of-state effective masses (mDOS*) arising from multiple hole pockets below the valence band maximum (VBM), yielding an in-plane ZT of 1.0 at 900 K. This high ZT is attained by the combination of a two-dimensional electronic structure, multivalley structures near the VBM, and inverted κlat anisotropy, which enables high σ and S together with low κlat in Ba2ZnN2. These results point to AE2ZnN2 compounds, particularly Ba2ZnN2, as potential environmentally friendly TE materials.

The Journal of Physical Chemistry CVol. 130(18)
National Institute for Materials Science (JP), Kanagawa Industrial Technology Center (JP), Institute of Science Tokyo (JP)
Kanagawa Institute of Industrial Science and Technology, Ministry of Education, Culture, Sports, Science and Technology, Tokyo Institute of Technology, Japan Society for the Promotion of Science
Affordable and clean energy
Openalex Percentile: Top 21%
Thermal Expansion and Ionic Conductivity
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