Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening
We demonstrate a novel band broadening model for the effects of alloy fluctuation on stimulated emission in aluminum gallium nitride (AlGaN) quantum wells (QWs). This model is used to study UV-C laser diode designs for different QW widths 3, 4.5, and 9 nm and varying Al mole fractions. We derive optimal parameters for target wavelengths of 270 and 240 nm. Using the 270 nm design as a case study, we analyze the impact of inhomogeneous broadening on the gain characteristic.
Authors
- Friedhard Römer
- Bernd Witzigmann (ORCID: https://orcid.org/0000-0001-9705-9516)
- Sebastian Kölle (ORCID: https://orcid.org/0009-0005-2236-9778)
Institutions
- Friedrich-Alexander-Universität Erlangen-Nürnberg (DE)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2026-04-20
- DOI
- https://doi.org/10.1063/5.0325429
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Leibniz-Gemeinschaft