Ultrathin Hf <sub>0.5</sub> Zr <sub>0.5</sub> O <sub>2</sub> Films with ZrO <sub>2</sub> Seed Layer for Ferroelectric Tunnel Junctions in Crossbar Array
, and stable ferroelectric switching. Integration into a 3 × 3 crossbar array demonstrates pattern programmability and stable ON/OFF readout. This work presents a practical pathway toward highly scalable and complementary metal-oxide-semiconductor (CMOS)-compatible ferroelectric nonvolatile memories with competitive performance at ultrathin thickness.
Authors
- Hyunseong Kim (ORCID: https://orcid.org/0009-0001-7067-3927)
- D.H Kim
- Ji Hyun Baek (ORCID: https://orcid.org/0000-0002-2538-2354)
- In Hyuk Im (ORCID: https://orcid.org/0000-0002-8963-7213)
- Y LEE
- Sohyeon Park (ORCID: https://orcid.org/0000-0002-5171-0083)
- Jae Young Kim
- Yong Wook Kim (ORCID: https://orcid.org/0000-0002-5234-2454)
- Jaehyun Kim (ORCID: https://orcid.org/0000-0001-7039-9342)
- Seung Ju Kim
- Hyeon Ji Lee (ORCID: https://orcid.org/0009-0002-3299-4604)
- Sung Hyuk Park
- Ho Won Jang (ORCID: https://orcid.org/0000-0002-6952-7359)
Institutions
- Kookmin University (KR)
- University of Southern California (US)
- Seoul National University (KR)
- California Southern University (US)
- Mitchell Institute (US)
- Advanced Institute of Convergence Technology (KR)
- Division of Materials Science and Engineering (AU)
- Texas A&M University (US)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2026-04-24
- DOI
- https://doi.org/10.1021/acsami.6c03702
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea