Defect-Controlled Photoresponse in GaOOH/Reduced Graphene Oxide Composites for Ultraviolet-C Photodetectors

GaOOH/reduced graphene oxide (rGO) composites are investigated for UVC photodetection with a defect-controlled photoresponse. The morphology and crystallinity of GaOOH grown on rGO are strongly influenced by the Ga(NO3)3 concentration. Excess precursor induces GaOOH aggregation, reducing the effective GaOOH/rGO interfacial area and generating trap states in GaOOH. These traps act as recombination centers that shorten the carrier lifetime and suppress the photocurrent. The optimized 10% Ga(NO3)3 device shows the best performance, achieving a responsivity of 63.82 mA/W and an external quantum efficiency of 31%, about four times higher than the 30% sample and ∼220 times higher than previously reported GaOOH-based photodetectors.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2026-04-22
DOI
https://doi.org/10.1021/acsaelm.6c00519
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Defect-Controlled Photoresponse in GaOOH/Reduced Graphene Oxide Composites for Ultraviolet-C Photodetectors

Anh-Vu Phan-Gia, Huy‐Binh Do, Phuong Viet Pham, Feng‐Chuan Chuang et al.
ACS Applied Electronic Materials
Ga2O3 and related materials
article

Defect-Controlled Photoresponse in GaOOH/Reduced Graphene Oxide Composites for Ultraviolet-C Photodetectors

Anh-Vu Phan-Gia, Huy‐Binh Do, Phuong Viet Pham, Feng‐Chuan Chuang, M.M. De Souza, Thi Thanh Van Tran, Tuan-Huu Nguyen, Thuy-Hong-Lam Ngo, Nam Nguyen Dang, Nguyen Khanh, Le Linh, Muhammad H. Nawaz, Hoang-Minh Le
article en

Abstract

GaOOH/reduced graphene oxide (rGO) composites are investigated for UVC photodetection with a defect-controlled photoresponse. The morphology and crystallinity of GaOOH grown on rGO are strongly influenced by the Ga(NO3)3 concentration. Excess precursor induces GaOOH aggregation, reducing the effective GaOOH/rGO interfacial area and generating trap states in GaOOH. These traps act as recombination centers that shorten the carrier lifetime and suppress the photocurrent. The optimized 10% Ga(NO3)3 device shows the best performance, achieving a responsivity of 63.82 mA/W and an external quantum efficiency of 31%, about four times higher than the 30% sample and ∼220 times higher than previously reported GaOOH-based photodetectors.

ACS Applied Electronic Materials
Vietnam National University Ho Chi Minh City (VN), National Sun Yat-sen University (TW), Duy Tan University (VN), National Tsing Hua University (TW), Faculty (United Kingdom) (GB), National Center for Theoretical Sciences (TW), Advanced Materials and Devices (United States) (US), Environmental Education Exchange (US), Ho Chi Minh City University of Technology and Engineering (VN), Ho Chi Minh City University of Technology (VN), University of Sheffield (GB)
Bộ Giáo dục và Ðào tạo
Affordable and clean energy
Openalex Percentile: Top 15%
Ga2O3 and related materials
DOISourceOpenAlex
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