Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation
) measurements further revealed a 25.6% reduction in current collapse under high-voltage stress. TCAD simulations corroborate these experimental results by demonstrating that reduced interface trap density suppresses peak electric fields at the drain edge, thereby validating the observed BV enhancement mechanism. Overall, SCFNP represents a low-temperature and scalable postfabrication passivation strategy for reliable GaN power devices.
Authors
- Ting‐Chang Chang (ORCID: https://orcid.org/0000-0002-5301-6693)
- Hsin‐Chu Chen (ORCID: https://orcid.org/0009-0003-4698-4842)
- Sheng‐Yao Chou
- Cheng-Hsien Lin
- Tsung-Sheng Kao
- An-Chen Liu
- Hao-Chung Kuo
Institutions
- ON Semiconductor (United States) (US)
- National Sun Yat-sen University (TW)
- National Yang Ming Chiao Tung University (TW)
- Chung Yuan Christian University (TW)
- Applied Photonics (United Kingdom) (GB)
Publication Details
- Journal
- ACS Omega
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1021/acsomega.5c10644
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science and Technology Council