Optoelectronic co-simulation model for a 3D integrated structure with TSVs based on a micro-ring modulator and driver

The 3D optoelectronic integration technology based on micro-ring modulators (MRMs) has been widely applied in co-packaged optics (CPO) and optical input/output (OIO) systems, as it can improve integration density and reduce transmission latency. The through-silicon via (TSV) used for vertical interconnects not only affects the signal integrity of the overall architecture, but its thermal effects also have a critical impact on high-speed channel performance. Establishing an accurate system model incorporating multi-physics is particularly critical for guiding simulations. In this work, we propose an optoelectronic co-simulation framework for MRMs integrated with TSVs with an electrical–thermal coupling effect. We develop a multi-physics simulation workflow that seamlessly links the electrical–thermal model of the TSV with the electrical model of the driver and the optical model of the MRM. By fitting the optical transmission spectrum of the MRM and extracting small-signal parameters, an equivalent circuit model for electro-optical co-simulation is constructed. Ultimately, high-frequency transmission simulation is implemented on the 3D optoelectronic system integrating TSVs, driver, and MRM, and the impact of driver self-heating on system performance is analyzed.