An anisotropic α-HgS single crystal with giant second-harmonic generation
The exploration of in-plane anisotropic properties is of great significance for fundamental studies and further development of polarization-sensitive optoelectronics. In this study, the synthesis of the chiral material α-HgS via a temperature-oscillation chemical vapor transport process is reported. The (001) plane orientation is well demonstrated by x-ray diffraction. Angle-resolved polarized Raman spectroscopy reveals that α-HgS exhibits strong in-plane anisotropic phonon vibrations. Furthermore, it is demonstrated that the second-harmonic generation (SHG) intensity of α-HgS is highly dependent on both excitation wavelengths and crystallographic orientation, especially with the giant SHG efficiency (134 times that of MoS2). These anisotropic properties make α-HgS an interesting platform for novel polarization-sensitive optoelectronic applications.
Authors
- Zhibin Ma (ORCID: https://orcid.org/0000-0001-9210-5026)
- Hongyang Zhao (ORCID: https://orcid.org/0000-0003-2731-7633)
- Yibo Han (ORCID: https://orcid.org/0000-0003-1296-5718)
- Xinyi Li (ORCID: https://orcid.org/0000-0003-0905-0293)
- Yanmei Chen (ORCID: https://orcid.org/0000-0001-8233-4490)
- Siqi Hu
- Ci Liu
- Chao Yu
- Qiuming Fu
Institutions
- Huanggang Normal University (CN)
- Wuhan National Laboratory for Optoelectronics (CN)
- Huazhong University of Science and Technology (CN)
- Wuhan Institute of Technology (CN)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2026-04-22
- DOI
- https://doi.org/10.1063/5.0322346
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China