S-atom dislocation-induced room-temperature ferroelectricity in two-dimensional α-MnS semiconductor
cycles), and long retention time (1 year). This work represents a substantial leap for developing two-dimensional ferroelectric semiconductors, which will stimulate the further exploration of ultrahigh-density information storage devices and computing-in-memory chips.
Authors
- Junbo Yang (ORCID: https://orcid.org/0000-0001-9840-2865)
- Jianping Shi (ORCID: https://orcid.org/0000-0002-7709-6405)
- Jun He (ORCID: https://orcid.org/0000-0002-5998-5225)
- Luying Song (ORCID: https://orcid.org/0009-0008-3954-6285)
- Yulin Jiang (ORCID: https://orcid.org/0000-0003-4135-0261)
- Yao Wen (ORCID: https://orcid.org/0000-0003-3518-5394)
- Yinuo Li (ORCID: https://orcid.org/0000-0003-1625-2715)
- Ruihan Xu (ORCID: https://orcid.org/0000-0001-7159-5935)
- Chuxuan Xiao
- J Wu
- Chen-Min Dai (ORCID: https://orcid.org/0009-0001-4847-0787)
- Yanan Peng
- Hang Sun
- Ling Huang
- Zhu Du
- Yuhang Li
- Ruofan Du
- Xiaohui Li
Institutions
- Wuhan University of Technology (CN)
- Suzhou University of Science and Technology (CN)
- Wuhan University (CN)
- Wuhan University of Science and Technology (CN)
- Wuhan Institute of Technology (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2026-04-22
- DOI
- https://doi.org/10.1038/s41467-026-71802-4
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Hubei Province