Ultrafast Nonvolatile Graphene Memory Enabled by InP@ZnS Core–Shell Quantum Dots
core-shell quantum dots, bare InP dots, and a PMMA spacer show that the ZnS shell markedly enhances charge injection. Time-resolved measurements and Fowler-Nordheim analysis reveal an earlier transition to Fowler-Nordheim tunneling in InP@ZnS devices. These results establish shell-bandgap engineering as a practical route to ultrafast, low-power nonvolatile memories.
Authors
- Honglei Wu (ORCID: https://orcid.org/0000-0002-8852-3951)
- Guohao Wen
- Jiamin Wen
- Guanlin Ke
- Zhenhua Sun (ORCID: https://orcid.org/0000-0002-9227-6738)
Institutions
- Shenzhen University (CN)
- Tsinghua–Berkeley Shenzhen Institute (CN)
- Ministry of Education (KN)
- Tsinghua University (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1021/acs.nanolett.6c00760
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Natural Science Foundation of Shenzhen City
- National Natural Science Foundation of China