Epitaxial n-ZnO/MoS <sub>2</sub> /p-GaN Heterostructure Light-Emitting Diodes
/GaN LED exhibited stable A and B exciton emissions, which imply direct bandgap transition with spin-orbit coupling. Without mechanically exfoliated or transferred 2D films, this epitaxial approach satisfies the key requirements for fabricating 2D-based optoelectronic and quantum light sources. The strength of epitaxy, such as large-scale scalability and multiple quantum-well formation, will further advance 2D optoelectronics, making them more practical and efficient.
Authors
- Seon Namgung (ORCID: https://orcid.org/0000-0002-1730-1665)
- Satyabrat Behera (ORCID: https://orcid.org/0009-0008-1916-9267)
- Gyu‐Chul Yi (ORCID: https://orcid.org/0000-0002-7703-3455)
- Daryll J. C. Dalayoan
- Kunook Chung (ORCID: https://orcid.org/0000-0001-7671-8527)
- Hu Young Jeong (ORCID: https://orcid.org/0000-0002-5550-5298)
- Imasda Rahmatulloh
- Taenam Kwon
- Jaehyun Lee (ORCID: https://orcid.org/0009-0006-4179-8997)
- Heekyeong Kim
- Soobeom Shin
- Anh T. D. Nguyen (ORCID: https://orcid.org/0009-0006-2297-9565)
- Asad Ali
Institutions
- Seoul National University (KR)
- Astronomical Institute of the Slovak Academy of Sciences (SK)
- Ulsan National Institute of Science and Technology (KR)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1021/acs.nanolett.5c06430
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Korea Institute for Advancement of Technology
- National Research Foundation of Korea