The next frontier of power electronics: Multi-KV-class gallium oxide
The next frontier of power electronics: Multi-KV-class gallium oxide Here we have an exclusive interview on the opportunities, challenges, and Innovations in Ga2O3 technology. The global transition toward electrification requires power electronics that can handle higher voltages with greater efficiency. While Silicon Carbide (SiC) and Gallium Nitride (GaN) have paved the way, β-Gallium Oxide (Ga2O3) is emerging as the definitive candidate for the next generation of multi-kilovolt (multi-kV) class devices. In this technical deep dive, we speak with three leading experts on the device architectures, material synthesis, and circuit-level innovations driving this revolution.
Authors
- Uttam Singisetti
Institutions
- University at Buffalo, State University of New York (US)
Publication Details
- Journal
- Open Access Government
- Published
- 2026-04-16
- DOI
- https://doi.org/10.56367/oag-050-12271
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00