Reversible Diode Effect in Truncated-pyramid-shaped Bi <sub>2</sub> O <sub>2</sub> Se Modulated by Tip-Force-Induced Flexoelectric Field
to modulate the total electric field. This competition enables the reversal of the rectification direction and continuous tuning of the rectification ratio, with the reversed diode exhibiting a rectification ratio less than 0.1 under large tip forces. Finite element simulations systematically corroborate the electric field distribution and reversal behavior within the BOS under tip force. This work provides fundamental insights and a theoretical foundation for understanding microscale flexoelectric effects and their application in the design of tunable electronic devices.
Authors
- Weiming Xiong (ORCID: https://orcid.org/0000-0002-5048-9196)
- Jieping Qin
- Wenyu Jiang
- K. Y. Shan
- Weiting Meng
- X Luo (ORCID: https://orcid.org/0009-0004-1924-6489)
- Fan Zhou
- Yanqing Zhang
- Xi Huang
Institutions
- Guangxi University (CN)
- Sun Yat-sen University (CN)
- International Center for Relativistic Astrophysics (IT)
- Nanning Normal University (CN)
- State Key Laboratory of Optoelectronic Materials and Technology
Publication Details
- Journal
- ACS Nano
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1021/acsnano.6c06400
- Primary Topic
- Nonlocal and gradient elasticity in micro/nano structures
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Natural Science Foundation of Guangxi Zhuang Autonomous Region
- National Natural Science Foundation of China