Thermal Analysis for Noise and Linearity Parameters of Junctionless Surround-Gate Graded Channel MOSFET

In communication systems, noise becomes an important performance metric for any electronic component; in this case, it reduces the effectiveness of MOSFETs in carrying out their activities at the nanoscale. In this paper, investigated the thermal analysis for noise, linearity parameters and HCI degradation for junctionless surround-gate graded channel (JL-SG-GC) MOSFET. The noise parameters examined using NFmin, Real Z0, ACF (〈V1V1*〉 and 〈V2V2*〉 ) CCF (Re〈V1V2*〉 and Img〈V1V2*〉 ), and NC. Noise characteristics have been simulated using ATLAS 3D device simulator at a frequency of 1 THz for different temperature variation. The noise parameter is the lowest when compared to existing structures when temperature rises, which demonstrates that the JL-SG-GC is suitable for analog, low noise performance application. Additionally, linearity metrics have been examined, and the findings indicate that, in comparison to other structures, the JL-SG-GC MOSFET’s features are the most important. As a result, it is a better structure than others for communication applications at high temperature.