2D Semiconductor Hexagonal Boron Nitride Towards Broad Optoelectronic Applications

Hexagonal boron nitride (h-BN) is one of the most important two-dimensional semiconductor materials due to its outstanding photoelectric properties, high mechanical strength and physicochemical stability. In this review, we contribute a critical summary of recent advances in h-BN research and outline remarkable challenges toward broad optoelectronic applications. Progresses on the fundamental properties of h-BN, including the structural, mechanical, bandgap, optoelectronic and thermodynamic properties, are included. The development of advanced synthesis methods and techniques for h-BN is systematically highlighted. Important functional components of h-BN have been studied for the future construction of multifunctional device structures, which will also lead to the design of novel optoelectronic devices conjugated with other advanced low-dimensional materials. Finally, we give a brief outlook pointing out critical challenges, important issues and directions aiming at further fundamental understanding and wider functionalization of h-BN.