Enhancing thermoelectric performance of GeTe monolayer via modulation doping at Ge sites
peaks can be improved. Our findings demonstrate the feasibility of using Be, Mg, Sn, and Pb as the dopants to enhance the TE performance of the GeTe monolayer.
Authors
- Yuehong Zhao (ORCID: https://orcid.org/0000-0002-0028-5726)
- 江兆潭
- Q.Z. Han
- Hanli Shi
- Jie Yang
- Lijuan Gong (ORCID: https://orcid.org/0009-0007-2302-598X)
- Ruishan Chen
Institutions
- Beijing Institute of Technology (CN)
- Advanced Technology & Materials (China) (CN)
- National Center of Biomedical Analysis (CN)
- Beijing Academy of Quantum Information Sciences (CN)
- Institute of Solid State Physics (CN)
- University of Chinese Academy of Sciences (CN)
- Shanxi Datong University (CN)
Publication Details
- Journal
- Nanotechnology
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1088/1361-6528/ae6274
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China