Towards Artificial Intelligence Hardware With 3D Integrated Ferroelectric Transistors
cycles, and stable multilevel conductance states suitable for synaptic computing. Mapping device characteristics to a convolutional neural network (CNN) for Canadian Institute for Advanced Research (CIFAR-10) inference yields 95.0% (tier-2) and 95.5% (tier-4) accuracy, approaching the 96.1% software baseline. Analog-domain convolution was further demonstrated by encoding kernel weights into FeFET conductance states for edge-aware image processing. These results establish M3D-integrated FeFETs as a scalable and reliable platform for next-generation compute-in-memory and neuromorphic vision applications.
Authors
- Hyunho Seok (ORCID: https://orcid.org/0000-0002-3189-5930)
- Taesung Kim
- Geonwook Kim
- Hyunbin Choi
- Sihoon Son
Institutions
- Massachusetts Institute of Technology (US)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Small
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1002/smll.73295
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00