Failure Modes and Degradation Mechanisms of Thyristors Under Combined Electric and Thermal Stress

The reliability of the characteristics of high-voltage (HV) thyristors is related to the operational safety of the entire HVDC project. In order to investigate the degradation mode of thyristors in HVDC projects more realistically, aging experiments were conducted on HV thyristors under the combined action of sinusoidal half-wave voltage and current in a simulated operating environment. Experimental results show that the on-state voltage, reverse recovery characteristics, and reverse leakage current of thyristors have all degraded to varying degrees during the aging process. The main failure mode of thyristors can be summarized as the failure of the reverse blocking characteristic. Microstructural characterization of failed HV thyristors is conducted to explain the degradation mechanisms, including device surface morphology and elemental composition analysis. Observations have shown that the failed thyristor silicon wafer has been burned and hollowed out, accompanied by copper impurities, and significant thermal breakdown has occurred at the edge of the anode surface of the chip. Defects in chip structure and the invasion of impurities can lead to a decrease in the minority carrier lifetime of materials, which is an important factor in the characteristics of semiconductor devices. On this basis, further simulation research is carried out to conclude that the shortening of the minority carrier lifetime of the thyristor will distort the carrier space distribution, resulting in the rise in the on-state voltage. Meanwhile, the carrier transport capability decreases, leading to a decrease in the reverse recovery speed. The energy released during the rapid generation and recombination of carriers is one of the main reasons for the failure of blocking characteristics. This work provides comprehensive insights into the failure modes and mechanisms of HV thyristors.