Deep-level-transient-spectroscopy study on electron traps near GaN surface generated by sputter deposition of SiO₂
This is the Accepted Manuscript version of an article accepted for publication in Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/ae5b0c.
Authors
- Heiji Watanabe (ORCID: https://orcid.org/0000-0002-7916-3093)
- Masahiro Hara (ORCID: https://orcid.org/0000-0001-9748-8011)
- Takuma Kobayashi (ORCID: https://orcid.org/0000-0002-2755-5079)
- Mikito Nozaki
- Masanari Takaoka
- Qiang Chen
Publication Details
- Journal
- Institutional Repositories DataBase (IRDB)
- Published
- 2026-04-16
- Primary Topic
- Advanced Electron Microscopy Techniques and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00